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this is information on a product in full production. june 2015 docid024095 rev 3 1/24 STB13NM60N, std13nm60n n-channel 600 v, 0.28 ? typ., 11 a mdmesh? ii power mosfets in d2pak and dpak packages datasheet ? production data figure 1. internal schematic diagram features ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance applications ? switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. dpak 1 3 tab 1 3 tab d2pak 6& 'ru7$% * 6 order code v ds (@tjmax) r ds(on) max i d STB13NM60N 650 v 0.36 ? 11 a std13nm60n table 1. device summary order code marking packages packaging STB13NM60N 13nm60n d2pak tape and reel std13nm60n dpak www.st.com
contents STB13NM60N, std13nm60n 2/24 docid024095 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 d 2 pak package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 dpak package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
docid024095 rev 3 3/24 STB13NM60N, std13nm60n electrical ratings 24 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 11 a i d drain current (continuous) at t c = 100 c 6.93 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 44 a p tot total dissipation at t c = 25 c 90 w dv/dt (2) 2. i sd 11 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80% v (br)dss. peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d2pak dpak r thj-case thermal resistance junction-case max 1.39 c/w r thj-pcb thermal resistance junction-pcb max 30 50 c/w table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 3.5 a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 200 mj
electrical characteristics STB13NM60N, std13nm60n 4/24 docid024095 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0, v ds = 600 v 1 a v gs = 0, v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 0.1 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.5 a 0.28 0.36 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 50 v, f = 1 mhz -790 -pf c oss output capacitance - 60 - pf c rss reverse transfer capacitance -3.6 -pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 135 - pf q g total gate charge v dd = 480 v, i d = 11 a, v gs = 10 v, (see figure 16) -27 -nc q gs gate-source charge - 4 - nc q gd gate-drain charge - 14 - nc r g gate input resistance f=1 mhz open drain - 4.7 - ? table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 5.5 a r g =4.7 ? v gs = 10 v (see figure 15) -3-ns t r rise time - 8 - ns t d(off) turn-off delay time - 30 - ns t f fall time - 10 - ns
docid024095 rev 3 5/24 STB13NM60N, std13nm60n electrical characteristics 24 table 8. source drain diode symbol parameter test conditions min typ. max. unit i sd source-drain current - 11 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 44 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 11 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s v dd = 100 v (see figure 17) -230 ns q rr reverse recovery charge - 2 c i rrm reverse recovery current - 18 a t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 17) -290 ns q rr reverse recovery charge - 2.5 c i rrm reverse recovery current - 17 a
electrical characteristics STB13NM60N, std13nm60n 6/24 docid024095 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for d2pak figure 3. thermal impedance for d2pak figure 4. safe operating area for dpak figure 5. thermal impedance for dpak figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c sinlge pulse am03258v1 , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v ?v pv pv 7m ?& 7f ?& 6lqjoh sxovh $0y , ' 9 '6 9 $ 9 *6 9 9 9 9 $0y , ' 9 *6 9 $ 9 '6 9 $0y
docid024095 rev 3 7/24 STB13NM60N, std13nm60n electrical characteristics 24 figure 8. normalized v (br)dss vs temperature figure 9. static drain-source on-resistance figure 10. gate charge vs gate-source voltage figure 11. capacitance variations figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v (br)dss -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 i d =1ma 1.08 1.10 am09028v1 r ds(on) 0.26 0.24 0.22 0.2 0 4 i d (a) ( ) 2 6 0.28 0.30 v gs =10v 8 10 am03302v1 v gs 6 4 2 0 0 q g (nc) (v) 20 8 10 10 v dd =480v i d =11a 30 12 300 200 100 0 400 500 v ds v ds (v) am03305v1 & 9 '6 9 s) &lvv &rvv &uvv $0y v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a am03306v1 r ds(on) 1.1 0.9 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 1.7 1.5 1.3 1.9 2.1 i d =5.5a v gs =10v am03307v1
electrical characteristics STB13NM60N, std13nm60n 8/24 docid024095 rev 3 figure 14. source-drain diode forward characteristics v sd 0 4 i sd (a) (v) 2 10 6 8 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =25c t j =150c am09290v1
docid024095 rev 3 9/24 STB13NM60N, std13nm60n test circuits 24 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package information STB13NM60N, std13nm60n 10/24 docid024095 rev 3 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack is an st trademark. 4.1 d 2 pak package information figure 21. d2pak (to-263) type a package outline b$buhy
docid024095 rev 3 11/24 STB13NM60N, std13nm60n package information 24 table 9. d2pak (to-263) type a package mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 7.75 8.00 d2 1.10 1.30 1.50 e 10 10.40 e1 8.50 8.70 8.90 e2 6.85 7.05 7.25 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package information STB13NM60N, std13nm60n 12/24 docid024095 rev 3 figure 22. d2pak (to-263) type b package outline b%buhy
docid024095 rev 3 13/24 STB13NM60N, std13nm60n package information 24 table 10. d2pak (to-263) type b package mechanical data dim. mm min. typ. max. a 4.36 4.60 a1 0 0.25 b 0.70 0.93 b2 1.14 1.70 c 0.38 0.694 c1 0.38 0.534 c2 1.19 1.36 d8.6 9.35 d1 6.9 e 10 10.55 e1 8.1 e2.54 h 15 15.85 l1.9 2.79 l1 1.65 l2 1.78 l3 0.25 l4 4.78 5.28
package information STB13NM60N, std13nm60n 14/24 docid024095 rev 3 figure 23. d2pak footprint (a) a. all dimension are in millimeters )rrwsulqw
docid024095 rev 3 15/24 STB13NM60N, std13nm60n package information 24 4.2 dpak package information figure 24. dpak (to-252) type a2 package outline bw\sh$buhy
package information STB13NM60N, std13nm60n 16/24 docid024095 rev 3 table 11. dpak (to-252) type a2 package mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 4.95 5.10 5.25 e6.40 6.60 e1 5.10 5.20 5.30 e2.162.282.40 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 l1 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r0.20 v2 0 8
docid024095 rev 3 17/24 STB13NM60N, std13nm60n package information 24 figure 25. dpak (to-252) type c2 outline bbw\shb& ??
package information STB13NM60N, std13nm60n 18/24 docid024095 rev 3 table 12. dpak (to-252) type c2 package mechanical data dim. mm min. typ. max. a 2.20 2.30 2.38 a1 0.90 1.01 1.10 a2 0.00 0.10 b 0.72 0.85 b4 5.13 5.33 5.46 c 0.47 0.60 c2 0.47 0.60 d 6.00 6.10 6.20 d1 5.25 - - e 6.50 6.60 6.70 e1 5.20 - - e 2.186 2.286 2.386 h 9.80 10.10 10.40 l 1.40 1.50 1.70 l1 2.90 ref l2 0.90 - 1.25 l3 0.51 bsc l4 0.60 0.80 1.00 l6 1.80 bsc 1579 2579 v2 0 8
docid024095 rev 3 19/24 STB13NM60N, std13nm60n package information 24 figure 26. dpak (to-252) footprint (b) b. all dimensions are in millimeters )3b4
packing information STB13NM60N, std13nm60n 20/24 docid024095 rev 3 5 packing information figure 27. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2
docid024095 rev 3 21/24 STB13NM60N, std13nm60n packing information 24 figure 28. reel table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t0.25 0.35 w23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
packing information STB13NM60N, std13nm60n 22/24 docid024095 rev 3 table 14. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e1.65 1.85n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t0.25 0.35 w15.7 16.3
docid024095 rev 3 23/24 STB13NM60N, std13nm60n revision history 24 6 revision history table 15. document revision history date revision changes 18-dec-2012 1 first release 10-jul-2014 2 ? updated: section 3: test circuits ? updated: section 4: package information ? minor text changes 19-jun-2015 3 ? updated 4: package information ? minor text changes
STB13NM60N, std13nm60n 24/24 docid024095 rev 3 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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